c o p y r igh t @ w i n s em i microelectronics c o . , lt d . , a l l ri g h t r e s er v ed . wf wf wf wf d d d d 4n60 4n60 4n60 4n60 b b b b rev.a nov .2010 silicon silicon silicon silicon n-channel n-channel n-channel n-channel mosfet mosfet mosfet mosfet features 4a,600v.r ds(on) (max 2. 4 )@v gs =10v ultra-low gate charge(typical 16nc) fast switching capability 100%avalanche tested isolation voltage ( viso = 4000v ac ) maximum junction temperature range(150 ) general description this power mosfet is produced using winsemi s advanced p lanar stripe, dmos technology. this latest technology has b een e specially designed to minimize on-state resistance, have a high rugged avalanche characteristics. this devices is specially well suited for half bridge and full bridge resonant topology line a e lectronic lamp ballast . absolute maximum ratings symbol parameter value units v dss drain source voltage 600 v i d continuous drain current(@tc=25 ) 4 a continuous drain current(@tc=100 ) 2.5 a i dm drain current pulsed (note1) 16 a v gs gate to source voltage 30 v e as single pulsed avalanche energy (note 2) 240 mj e ar repetitive avalanche energy (note 1) 10 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d total power dissipation(@tc=25 ) 80 w derating factor above 25 0. 78 w/ t j , t stg junction and storage temperature -55~150 t l channel temperature 300 thermal characteristics symbol parameter value units min typ max r qjc thermal resistance, junction-to-case - - 1.56 /w r qja thermal resistance, junction-to-ambient * 50 r qja thermal resistance, junction-to-ambient - - 110 /w *when mounted on the minimum pad size recommended(pcb mount)
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance wf wf wf wf d d d d 4n60 4n60 4n60 4n60 b b b b 2 / 7 electrical characteristics (tc = 25 c) characteristics symbol test condition min type max unit gate leakage current i gss v gs = 30 v, v ds = 0 v - - 100 na gate ? source breakdown voltage v (br)gss i g = 10 a, v ds = 0 v 30 - - v drain cut ? off current i dss v ds = 600 v, v gs = 0 v - - 1 0 a v ds = 480 v, t c = 125 c - - 100 a drain ? source breakdown voltage v (br)dss i d = 250 a, v gs = 0 v 6 00 - - v gate threshold voltage v gs(th) v ds = 10 v, i d =250 a 2 - 4 v drain ? source on resistance r ds(on) v gs = 10 v, i d = 2.0 a - 1. 7 2. 4 input capacitance c iss v ds = 25 v, v gs = 0 v , f = 1 mhz - 545 670 pf reverse transfer capacitance c rss - 7 1 0 output capacitance c oss - 70 90 switching time rise time tr v dd = 3 00 v, i d = 4 .0 a r g =25 (note4,5) - 10 30 ns turn ? on time ton - 35 8 0 fall time tf - 45 100 turn ? off time toff - 20 50 total gate charge (gate ? source plus gate ? drain) qg v dd = 48 0 v, v gs = 10 v, i d = 4. 0 a (note4,5) - 1 6 20 nc gate ? source charge qgs - 3.4 - gate ? drain ( miller ) charge qgd - 7 - source ? drain ratings and characteristics (ta = 25 c) characteristics symbol test condition min type max unit continuous drain reverse current i dr - - - 4 a pulse drain reverse current i drp - - - 17.6 a forward voltage (diode) v dsf i dr = 4 .0 a, v gs = 0 v - - 1.4 v reverse recovery time trr i dr = 4 .0 a, v gs = 0 v, di dr / dt = 100 a / s - 390 - ns reverse recovery charge qrr - 2.2 - c note 1.repeativity rating :pulse width limited by junction temperature 2.l=18.5mh,i as =4. 0 a,v dd =50v,r g =0 ,starting t j =25 3.i sd 4a,di/dt 200a/us, v dd steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance wf wf wf wf d d d d 4n60 4n60 4n60 4n60 b b b b 3 / 7 fig.1 on-state cha ra cteristics fig.2 transfer current characteristics fig3. on resistance variation vs drain current fig.4 body diode forward voltage variation vs source current and temperature fig.5 on-resistance variation vs junction temperature fig.6 gate charge characteristics
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance wf wf wf wf d d d d 4n60 4n60 4n60 4n60 b b b b 4 / 7 fig.7 maximum safe operation area fig.8 maximum drain current vs case temperature fig.9 transient thermal response curve
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance wf wf wf wf d d d d 4n60 4n60 4n60 4n60 b b b b 5 / 7 fig.10 gate test circuit & waveform fig.11 resistive switching test circuit & waveform fig.12 unclamped inductive switching test circuit & waveform
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance wf wf wf wf d d d d 4n60 4n60 4n60 4n60 b b b b 6 / 7 fig.13 peak diode recovery dv/dt test circuit & waveform
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance wf wf wf wf d d d d 4n60 4n60 4n60 4n60 b b b b 7 / 7 to-2 to-2 to-2 to-2 52 52 52 52 package package package package dimension dimension dimension dimension unit:mm
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